L.K. Wang, A. Acovic, et al.
MRS Spring Meeting 1993
Conference paper
Examination of hole mobility in ultra-thin body SOI MOSFETs
Abstract
An examination of hole mobility in ultra-thin body (UTB) silicon on insulator (SOI) MOSFET is presented. Strong degradation of hole mobility in ultra-thin Si bodies was observed. Analysis indicated that surface roughness scattering, enhanced by spatial confinement due to the small Si thicknesses could be a major contributor to mobility degradation for thickness below 5 nm.
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