D. Arnold, E. Cartier, et al.
SPIE Laser-Induced Damage in Optical Materials 1990
An analysis of silicate/Si(001) interfaces was discussed. The solid-state reaction of yttria and silicon oxynitride was used to create gate dielectrics with a direct yttrium silicate-silicon interface. The complete consumption of the underlying oxide through silicate formation during high-temperature annealing was indicated by medium-energy ion scattering. The small flat-band voltage shifts, indicating low quantities of charge without passivation steps was exhibited by silicate dielectrics.
D. Arnold, E. Cartier, et al.
SPIE Laser-Induced Damage in Optical Materials 1990
M. Copel, E. Cartier, et al.
Applied Physics Letters
F.-J. Meyer Zu Heringdorf, D. Kähler, et al.
Surface Review and Letters
E. Cartier, J.H. Stathis
Microelectronic Engineering