Shiyi Chen, Daniel Martínez, et al.
Physics of Fluids
Paper
Hot-electron dynamics in SiO2 and the degradation of the Si/SiO2-interface
Abstract
Monte Carlo transport simulations are used to calculate the interface-state buildup at the Si/SiO2-interface during high-field current stress using a hot-electron-induced hydrogen-release model. © 1993.
Related
Sharee J. McNab, Richard J. Blaikie
Materials Research Society Symposium - Proceedings
Min Yang, Jeremy Schaub, et al.
Technical Digest-International Electron Devices Meeting
C.M. Brown, L. Cristofolini, et al.
Chemistry of Materials