Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
An epitaxial film of NdNiO3 was investigated by the resonant X-ray scattering technique. Below the metal-to-insulator transition a pronounced energy dependence of the scattering intensity at the Ni K-edge is observed. This is clear evidence for a charge disproportionation on the Ni site, leading to two different electronic Ni ions. The occurrence of a reflection in the σ-π channel, its weakness and its azimuthal dependence together with a symmetry analysis gives clear indications that the observed energy dependence in the σ-σ channel is not due to the asphericity of the Ni 4p shell, but is directly related to the charge disproportionation. © 2003 Elsevier B.V. All rights reserved.
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
Frank Stem
C R C Critical Reviews in Solid State Sciences
J.K. Gimzewski, T.A. Jung, et al.
Surface Science
Sang-Min Park, Mark P. Stoykovich, et al.
Advanced Materials