Role of oxygen vacancies in cr-doped SrTiO3 for resistance-change memory
- Markus Janousch
- G. Ingmar Meijer
- et al.
- 2007
- Advanced Materials
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11 results for M. Janousch
Origin of oxygen vacancies in resistive switching memory devices
- B.P. Andreasson
- M. Janousch
- et al.
- 2009
- XAFS 2009
Charge disproportionation observed by resonant X-ray scattering at the metal-insulator transition in NdNiO3
- U. Staub
- V. Scagnoli
- et al.
- 2004
- Physica B: Condensed Matter
Charge disproportionation observed by resonant X-ray scattering at the metal-insulator transition in NdNiO3
- V. Scagnoli
- U. Staub
- et al.
- 2003
- Conference on Magnetism (ICM) 2003
Detecting oxygen vacancies in SrTiO3 by 3d transition-metal tracer ions
- B.P. Andreasson
- M. Janousch
- et al.
- 2009
- Physical Review B - CMMP
Spatial distribution of oxygen vacancies in Cr-doped SrTiO3 during an electric-field-driven insulator-to-metal transition
- B.P. Andreasson
- M. Janousch
- et al.
- 2009
- Applied Physics Letters
Transition-metal-oxide-based resistance-change memories
- 2008
- IBM J. Res. Dev
Resistive switching in Cr-doped SrTiO3: An X-ray absorption spectroscopy study
- B.P. Andreasson
- M. Janousch
- et al.
- 2007
- Materials Science and Engineering: B
Role of magnetic and orbital ordering at the metal-insulator transition in NdNiO3
- V. Scagnoli
- U. Staub
- et al.
- 2006
- Physical Review B - CMMP
Charge disproportionation and search for orbital ordering in NdNiO3 by use of resonant x-ray diffraction
- V. Scagnoli
- U. Staub
- et al.
- 2005
- Physical Review B - CMMP