G. Will, N. Masciocchi, et al.
Zeitschrift fur Kristallographie - New Crystal Structures
A process for the fabrication of mirror facets for AlGaAs/GaAs laser diodes is described. The major requirements for the fabrication of high quality mirrors have been fulfilled by using Cl2/Ar chemically assisted ion beam etching (CAIBE) and a new multilayer mask structure that produces the smoothest facets. The fabricated AlGaAs/GaAs SQW-GRIN-SCH lasers with etched mirrors show characteristics similar to those of lasers with cleaved mirrors on the same substrate. Results of on-wafer testing of laser threshold uniformity by means of monitor diodes indicate the potential of the process for laser integration and full wafer fabrication and testing. © 1989.
G. Will, N. Masciocchi, et al.
Zeitschrift fur Kristallographie - New Crystal Structures
Frank R. Libsch, Takatoshi Tsujimura
Active Matrix Liquid Crystal Displays Technology and Applications 1997
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ADMETA 2011
S. Cohen, J.C. Liu, et al.
MRS Spring Meeting 1999