Lawrence Suchow, Norman R. Stemple
JES
Chemically induced grain-boundary migration is demonstrated in polycrystalline silicon films. Growth of anomalously large grains, along with dopant depletion, is observed in P-doped polycrystalline Si films annealed at 700°C in the presence of a neighboring TiSi2 film. We propose a novel driving mechanism for migration here, an electrostatic force on the interface due to inhomogeneous dopant depletion. © 1988.
Lawrence Suchow, Norman R. Stemple
JES
Mitsuru Ueda, Hideharu Mori, et al.
Journal of Polymer Science Part A: Polymer Chemistry
F.J. Himpsel, T.A. Jung, et al.
Surface Review and Letters
Corneliu Constantinescu
SPIE Optical Engineering + Applications 2009