P. Martensson, R.M. Feenstra
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Paper
Comment on carrier-concentration dependence of critical superconducting current induced by the proximity effect in silicon
Abstract
It is pointed out that effect of an applied gate voltage on the critical current observed in a gate-controlled Si-coupled weak link by Nishino, Yamada, and Kawabe [Phy. Rev. B 33, 2042 (1986)] is much larger than that expected from the small change of carrier density in the link. © 1987 The American Physical Society.