PaperElectronic structure of Si(111)-B(s3 × s3) R30°studied by Si 2p and B 1s core-level photoelectron spectroscopyA.B. McLean, L.J. Terminello, et al.Physical Review B
PaperThe polarization dependence of Bi-induced surface states on GaAs(110)A.B. McLean, R. Ludeke, et al.Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
PaperOccupied surface-state bands of Bi(1×1) overlayers on an InAs(110) surface grown by molecular-beam epitaxyD.N. McIlroy, D. Heskett, et al.Physical Review B
PaperTwo-dimensional electronic structure of the GaAs(110)-Bi systemA.B. McLean, R. Ludeke, et al.Physical Review B
