F. Legoues, J. Tersoff, et al.
Applied Physics Letters
We describe a technique for the homoepitaxial growth of epitaxial, faceted Si islands on Si(001), consisting of predeposition of Ga surfactant followed by ultrahigh vacuum chemical vapor deposition (CVD) of Si. Ga-mediated Si CVD leads to the formation of Si islands exhibiting {113} and {102} facets. Surfactant-mediated CVD is shown to provide a new degree of freedom for the production of nanoscale structures without lithography. © 2008 American Institute of Physics.
F. Legoues, J. Tersoff, et al.
Applied Physics Letters
J.B. Hannon, J. Tersoff, et al.
Physical Review Letters
A. Portavoce, M. Kammler, et al.
Materials Science in Semiconductor Processing
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Science