Pattern level assembly of Ge quantum dots on Si with focused ion beam templating
- M. Gherasimova
- R. Hull
- et al.
- 2008
- Applied Physics Letters
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6 results for R. Hull
Control of homoepitaxial Si nanostructures by locally modified surface reactivity
- A. Portavoce
- R. Hull
- et al.
- 2008
- Applied Physics Letters
Nanometer-scale control of single quantum dot nucleation through focused ion-beam implantation
- A. Portavoce
- R. Hull
- et al.
- 2007
- Physical Review B - CMMP
Mechanism of the nanoscale localization of Ge quantum dot nucleation on focused ion beam templated Si(001) surfaces
- A. Portavoce
- M. Kammler
- et al.
- 2006
- Nanotechnology
Growth kinetics of Ge islands during Ga-surfactant-mediated ultrahigh vacuum chemical vapor deposition on Si(001)
- A. Portavoce
- M. Kammler
- et al.
- 2004
- Physical Review B - CMMP
Interactions of moving dislocations in semiconductors with point, line and planar defects
- R. Hull
- E.A. Stach
- et al.
- 1999
- Physica Status Solidi (A) Applied Research