Conference paper
Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
Transport measurements are presented of a small island of electrons confined within a semiconductor heterostructure. Low bias measurements are used to infer the addition spectrum of the island as a function of gate voltage and magnetic field. Nonlinear measurements are used to explore the excitation spectrum of the island. These measurements are interpreted in terms of a model that treats the Coulomb interactions between electrons in a self-consistent manner. © 1993.
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
R.D. Murphy, R.O. Watts
Journal of Low Temperature Physics
Heinz Schmid, Hans Biebuyck, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
P.C. Pattnaik, D.M. Newns
Physical Review B