Mridula Prathapan, Peter Mueller, et al.
ESSCIRC 2022
Multiplexed local charge storage, close to quantum processors at cryogenic temperatures could generate a multitude of control signals, for electronics or qubits, in an efficient manner. Such cryogenic electronics require generating quasi-static control signals with small area footprint, low noise, high stability, low power dissipation and, ideally, in a multiplexed fashion to reduce the number of input/outputs. In this work, we integrate capacitors with cryogenic high-electron mobility transistor (HEMT) arrays and demonstrate quasi-static bias generation using gate pulses controlled in time and frequency domains. Multi-channel bias generation is also demonstrated. Operation at 4 K exhibits improved bias signal variability and greatly reduced subthreshold swing, reaching values of ~6 mV/decade. Due to the very low threshold voltage of 80 mV at 4 K and the steep subthreshold swing, these circuits can provide an advantage over the silicon-based complementary metal-oxide-semiconductor equivalents by allowing operation at significantly reduced drive bias in the low output voltage regime <1 V. Together with their high-speed operation, this makes HEMTs an attractive platform for future cryogenic signal generation electronics in quantum computers.
Mridula Prathapan, Peter Mueller, et al.
ESSCIRC 2022
Cezar Zota, Alberto Ferraris, et al.
Nature Electronics
Cezar Zota, Alberto Ferraris, et al.
Nature Electronics
Giacomo Graziano, Alberto Ferraris, et al.
IEEE T-ED