S.C. Lai, S. Kim, et al.
VLSI Technology 2013
The crystallization times of Ge-Te phase change materials with variable Ge concentrations (29.5-72.4 at. %) were studied. A very strong dependence of the crystallization time on the composition for as-deposited, amorphous films was confirmed, with a minimum for the stoichiometric composition GeTe. The dependence is weaker for melt-quenched, amorphous material and crystallization times are between one to almost four orders of magnitude shorter than for as-deposited materials. This is promising for applications because recrystallization from the melt-quenched phase is the relevant process for optical and solid state memory, and fast crystallization and weak dependence on compositional variations are desirable. © 2009 American Institute of Physics.
S.C. Lai, S. Kim, et al.
VLSI Technology 2013
T. Thomson, B.D. Terris, et al.
Journal of Applied Physics
C. Cabral, L. Krusin-Elbaum, et al.
Applied Physics Letters
M. H. Lee, R. Cheek, et al.
IEDM 2010