Dionisis Berdebes, Tony Low, et al.
IEEE T-ED
We demonstrate np+n InAs bipolar transistors that operate under room temperature and cryogenic conditions. InAs transistors on an InP substrate were characterized as a function of temperature and exhibited good room temperature and low temperature common-emitter characteristics. Although the base doping density exceeded the emitter doping density by a factor of 20, current gains of 30 were achieved at room temperature. Junction leakage currents and contact resistance were identified as problems to address.
Dionisis Berdebes, Tony Low, et al.
IEEE T-ED
James R. Schwank, Marty R. Shaneyfelt, et al.
IEEE TNS
Yang Liu, Mathieu Luisier, et al.
IEEE T-ED
Jonathan A. Pellish, Michael A. Xapsos, et al.
RADECS 2009