O.F. Schirmer, K.W. Blazey, et al.
Physical Review B
The density of states in heavily doped silicon can be derived from the electronic effect on a shear elastic constant. The density of states found in this way confirms the anomalous values obtained from specific heat measurements. © 1979.
O.F. Schirmer, K.W. Blazey, et al.
Physical Review B
J. Tersoff
Applied Surface Science
Daniel J. Coady, Amanda C. Engler, et al.
ACS Macro Letters
J. Paraszczak, J.M. Shaw, et al.
Micro and Nano Engineering