Tak H. Ning, Randall D. Isaac, et al.
IEEE T-ED
Silicon donors have been implanted through the gate and into the (Al,Ga)As insulator of a GaAs SISFET structure in order to produce a negative shift in the device threshold voltage in selective areas of the wafer. The depletion-mode devices fabricated in this manner have controllable threshold voltage, high transconductance (350 mS/mm at 300 K and 380 mS/mm at 77 K for 1- μ m gate-length devices), and low gate leakage characteristics. Such devices are suitable for enhance-deplete GaAs SISFET logic circuits. Copyright © 1987 by The Institute of Electrical and Electronics Engineers, Inc.
Tak H. Ning, Randall D. Isaac, et al.
IEEE T-ED
Paul M. Solomon
IEEE Electron Device Letters
Matthew Copel, Marcelo A. Kuroda, et al.
Nano Letters
Jing Wang, Paul M. Solomon, et al.
IEEE Transactions on Electron Devices