Process Damage and Contamination Effects for Shallow Si Implanted GaAs
- H. Baratte
- A.J. Fleischman
- et al.
- 2019
- JES
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15 results for H. Baratte
Reactive Ion Etching of GaAs in Chlorine and Resulting Surface Damage
- B.S. Lee
- H. Baratte
- 2019
- JES
Passivation of n and p dopants in ion-implanted GaAs by a 2D+ plasma
- D.K. Sadana
- J.P. De Souza
- et al.
- 1991
- Applied Physics Letters
Threshold shifting in pseudomorphic semiconductor-insulator-semiconductor heterostructure field-effect transistors
- S.L. Wright
- P. Solomon
- et al.
- 1991
- Applied Physics Letters
Effect of F co-implant during annealing of Be-implanted GaAs
- P.E. Hallali
- H. Baratte
- et al.
- 1990
- Applied Physics Letters
Annealing behavior of GaAs implanted with Si+ and SiF + and rapid thermally annealed with plasma-enhanced chemical vapor deposited silicon nitride cap
- J.P. De Souza
- D.K. Sadana
- et al.
- 1990
- Applied Physics Letters
Outdiffusion of Be during rapid thermal annealing of high-dose Be-implanted GaAs
- H. Baratte
- D.K. Sadana
- et al.
- 1990
- Journal of Applied Physics
Passivation of dopants in ion implanted and rapid thermally annealed GaAs in H+ plasma environment
- J.P. de Souza
- D.K. Sadana
- et al.
- 1990
- Symposium on Process Physics and Modeling in Semiconductor Technology 1990
Electrical characterization of GaAs/Al0.30Ga0.70 As p+-n heterojunctions grown by metalorganic vapor phase epitaxy
- M.A. Tischler
- H. Baratte
- et al.
- 1989
- Journal of Applied Physics
The influence of growth conditions on the electrical properties of GaAs/Al0.30Ga0.70As p+/n heterojunctions
- M.A. Tischler
- H. Baratte
- et al.
- 1988
- Journal of Crystal Growth