PaperImpact of spacecraft shielding on direct ionization soft error rates for sub-130 nm technologiesJonathan A. Pellish, Michael A. Xapsos, et al.IEEE TNS
PaperSingle-event-upset critical charge measurements and modeling of 65 nm silicon-on-insulator latches and memory cellsDavid F. Heidel, Kenneth P. Rodbell, et al.IEEE TNS
PaperComparison of single and two-photon absorption for laser characterization of single-event upsets in SOI SRAMsJames R. Schwank, Marty R. Shaneyfelt, et al.IEEE TNS
PaperLatch design techniques for mitigating single event upsets in 65 nm SOI device technologyA.J. KleinOsowski, Ethan H. Cannon, et al.IEEE TNS
