Bryan L. Jackson, Bipin Rajendran, et al.
ACM JETC
A new design for an all-silicon field-effect optical modulator in a ring resonator geometry is proposed and modeled by means of finite-element method simulations. It is shown that the optimal relative placement of the ultrathin field-effect-generated charge layers and the optical mode in the strong-confinement waveguides leads to more than an order-of-magnitude enhancement in the light-charge interaction compared with the recent predictions in the literature. We show that such an enhancement could provide optical modulation with a >7 dB extinction-ratio using a voltage swing of only 2 V, thus making our design compatible with complementary metal-oxide semiconductor technology. © 2005 Optical Society of America.
Bryan L. Jackson, Bipin Rajendran, et al.
ACM JETC
Bipin Rajendran, Rohit S. Shenoy, et al.
IEEE Transactions on Electron Devices
Alvaro Padilla, Geoffrey W. Burr, et al.
DRC 2014
Alvaro Padilla, Geoffrey W. Burr, et al.
IEEE T-ED