Exploring the design space for crossbar arrays built with mixed-ionic-electronic-conduction (MIEC) access devices
- Pritish Narayanan
- Geoffrey W. Burr
- et al.
- 2015
- IEEE J-EDS
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28 results for Rohit S. Shenoy
Experimental Demonstration and Tolerancing of a Large-Scale Neural Network (165 000 Synapses) Using Phase-Change Memory as the Synaptic Weight Element
- Geoffrey W. Burr
- Robert M. Shelby
- et al.
- 2015
- IEEE T-ED
Circuit-level benchmarking of access devices for resistive nonvolatile memory arrays
- Pritish Narayanan
- Geoffrey W. Burr
- et al.
- 2014
- IEDM 2014
Experimental demonstration and tolerancing of a large-scale neural network (165,000 synapses), using phase-change memory as the synaptic weight element
- Geoffrey W. Burr
- Robert M. Shelby
- et al.
- 2014
- IEDM 2014
On the origin of steep i - V nonlinearity in mixed-ionic-electronic-conduction-based access devices
- Alvaro Padilla
- Geoffrey W. Burr
- et al.
- 2015
- IEEE T-ED
MIEC (mixed-ionic-electronic-conduction)-based access devices for non-volatile crossbar memory arrays
- Rohit S. Shenoy
- Geoffrey W. Burr
- et al.
- 2014
- Semiconductor Science and Technology
Access devices for 3D crosspoint memory
- Geoffrey W. Burr
- Rohit S. Shenoy
- et al.
- 2014
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Exploring the design space for resistive nonvolatile memory crossbar arrays with mixed ionic-electronic-conduction (MIEC)-based Access Devices
- Pritish Narayanan
- Geoffrey W. Burr
- et al.
- 2014
- DRC 2014
The origin of massive nonlinearity in Mixed-Ionic-Electronic-Conduction (MIEC)-based Access Devices, as revealed by numerical device simulation
- Alvaro Padilla
- Geoffrey W. Burr
- et al.
- 2014
- DRC 2014
Ga46Sb54 material for fast switching and Pb-Free soldering reflow process complying phase-change memory
- Huai-Yu Cheng
- Simone Raoux
- et al.
- 2014
- ECS J. Solid State Sci. Technol.