Surendra B. Anantharaman, Joachim Kohlbrecher, et al.
MRS Fall Meeting 2020
This paper focuses on using the resist contrast curve as a method for pre-screening resists for attenuated phase-shift mask contact hole applications. The importance of surface inhibition and high c-value in developing PSM C/H resists is revealed. These concepts are confirmed by lithographic evaluation. A good overall process window (without sidelobe printing) is demonstrated by such high c-value resists.
Surendra B. Anantharaman, Joachim Kohlbrecher, et al.
MRS Fall Meeting 2020
Kenneth R. Carter, Robert D. Miller, et al.
Macromolecules
P.C. Pattnaik, D.M. Newns
Physical Review B
T.N. Morgan
Semiconductor Science and Technology