Conference paper
Ultra-thin phase-change bridge memory device using GeSb
Y.C. Chen, C.T. Rettner, et al.
IEDM 2006
Using intracavity frequency doubling of a diode laser pumped 946 nm Nd laser, 3.1 mW of blue output power at 473 nm was obtained. Angle-tuned, type-I frequency doubling in potassium niobate was employed, and both the KNbO 3 and Nd crystals were used at room temperature.
Y.C. Chen, C.T. Rettner, et al.
IEDM 2006
W.P. Risk, S.D. Lau
Applied Physics Letters
W.P. Risk, S.D. Lau, et al.
Applied Physics Letters
R.M. Macfarlane, F. Tong, et al.
IQEC 1988