R.W. Gammon, E. Courtens, et al.
Physical Review B
An ultra-thin phase-change bridge (PCB) memory cell, implemented with doped GeSb, is shown with < 100μA RESET current. The device concept provides for simplified scaling to small crosssectional area (60nm2) through ultra-thin (3nm) films; the doped GeSb phase-change material offers the potential for both fast crystallization and good data retention.
R.W. Gammon, E. Courtens, et al.
Physical Review B
R.M. Macfarlane, R.L. Cone
Physical Review B - CMMP
I. Morgenstern, K.A. Müller, et al.
Physica B: Physics of Condensed Matter
J. Appenzeller, J. Knoch, et al.
IEDM 2006