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Direct high-resolution photoetching of various resists and polymers has been demonstrated using an ArF excimer laser at 193 nm. Features as small as 0.3 μm have been produced in 1 μm thick films with no subsequent wet processing steps necessary. © 1984 Springer-Verlag.
I.K. Pour, D.J. Krajnovich, et al.
SPIE Optical Materials for High Average Power Lasers 1992
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