D.J. DiMaria, M.V. Fischetti
Applied Surface Science
Vacuum-emission and carrier-separation techniques, together with novel metal-oxide-semiconductor structures, have been used to observe the threshold field for the onset of electron heating in silicon dioxide. The magnitude of this electric field is 1.5-2.0 MV/cm, independent of oxide thickness and composition. This value is consistent with all of the current theoretical calculations. A minimum average electronic energy of 1.0 eV is shown to be necessary to observe emission of the electrons into vacuum. © 1986 The American Physical Society.
D.J. DiMaria, M.V. Fischetti
Applied Surface Science
J. Batey, E. Tierney, et al.
IEEE Electron Device Letters
S.E. Laux, M.V. Fischetti
BCTM 1995
N. Sano, M.V. Fischetti, et al.
IWCE 1998