J.E.E. Baglin, J.C. Davis, et al.
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
The theoretical description of transistors has been impeded by the lack of knowledge of the p-type impurity distributions. A method is described which accurately gives concentration profiles of the boron p-type regions in transistors. The technique has been used to establish that the base regions in the fastest bipolar transistors are markedly different than usually assumed. © 1972 The American Institute of Physics.
J.E.E. Baglin, J.C. Davis, et al.
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
A.J. Kellock, M.H. Tabacniks, et al.
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
G.J. Iafrate, J.F. Ziegler, et al.
Journal of Applied Physics
D.H. Lee, B. Park, et al.
Journal of Applied Physics