Julian J. Hsieh
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Modern microelectronic devices employ transition metal silicides in self-aligned structures on highly doped silicon material. Thermal treatments during or following silicide formation can significantly alter the dopant concentration in the underlying silicon layer. This paper discusses various diffusion mechanisms in self-aligned silicide structures and their effect on device performance. © 1988, The Electrochemical Society, Inc. All rights reserved.
Julian J. Hsieh
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Frank R. Libsch, Takatoshi Tsujimura
Active Matrix Liquid Crystal Displays Technology and Applications 1997
S.F. Fan, W.B. Yun, et al.
Proceedings of SPIE 1989
Heinz Schmid, Hans Biebuyck, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures