Conference paper
Structure of the silicon-oxide interface
Yuhai Tu, J. Tersoff
Thin Solid Films
The effect of drain voltage scaling on the turn-on behavior of carbon nanotube (CNT) transistors was studied. The decrease in oxide thickness was found to improve the turn-on behavior. Scaling was employed to avoid an exponential increase in off-current with drain voltage, arising due to the schottky barriers modulation at both the source and drain contact.
Yuhai Tu, J. Tersoff
Thin Solid Films
M.D. Johnson, K.T. Leung, et al.
Surface Science
J. Tersoff
Physical Review Letters
Yuhai Tu, J. Tersoff
Physical Review Letters