Conference paper
Growth kinetics of si and ge nanowires
S. Kodambaka, J. Tersoff, et al.
SPIE OPTO 2009
The effect of drain voltage scaling on the turn-on behavior of carbon nanotube (CNT) transistors was studied. The decrease in oxide thickness was found to improve the turn-on behavior. Scaling was employed to avoid an exponential increase in off-current with drain voltage, arising due to the schottky barriers modulation at both the source and drain contact.
S. Kodambaka, J. Tersoff, et al.
SPIE OPTO 2009
P.M. Mooney, F.K. LeGoues, et al.
Journal of Applied Physics
J. Tersoff
Physical Review Letters
Vasili Perebeinos, J. Tersoff
Physical Review B - CMMP