S.J. Wind, M. Radosavljević, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
The effect of drain voltage scaling on the turn-on behavior of carbon nanotube (CNT) transistors was studied. The decrease in oxide thickness was found to improve the turn-on behavior. Scaling was employed to avoid an exponential increase in off-current with drain voltage, arising due to the schottky barriers modulation at both the source and drain contact.
S.J. Wind, M. Radosavljević, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
S. Heinze, J. Tersoff, et al.
Physical Review Letters
B.J. Spencer, J. Tersoff
Physical Review B - CMMP
S. Heinze, M. Radosavljević, et al.
Physical Review B - CMMP