Effect of doping on degradation of GaAsSingle Bond signAlx Ga1-xAs injection lasers

P.G. McMullin; J.M. Blum; K.K. Shih; A.W. Smith; G.R. Woolhouse

doi:10.1063/1.1655068

Applied Physics Letters

Paper

09 Oct 2003

Effect of doping on degradation of GaAsSingle Bond signAl_x Ga_1-xAs injection lasers

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Abstract

The influence of the active layer dopant on the degradation of GaAsSingle Bond signAlx Ga1-xAs double-heterostructure lasers has been studied using pulsed excitation. Compensated p -type dopants give the slowest degradation, while n -type dopants give the most rapid. These results can be understood on the basis of arsenic vacancy migration and the formation of arsenic vacancy-acceptor complexes. © 1974 American Institute of Physics.

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