E.Y. Andrei, D.C. Glattli, et al.
Surface Science
Analyzing possible relaxation mechanisms in two-dimensional electron gas in GaAs-AlGaAs inverted structures we show that the existence of unintentional acceptor doping in the AlGaAs barriers, with concentration as high as 10 17 cm-3, provides the only explanation for the observed transport and single particle relaxation times.
E.Y. Andrei, D.C. Glattli, et al.
Surface Science
M. Heiblum, J. Bloch, et al.
JVSTA
P.L. McEuen, E.B. Foxman, et al.
Physical Review B
M. Heiblum
IEDM 1988