Effect of ion bombardment on the plasma-assisted etching and deposition of plasma perfluoropolymer thin films

F. Fracassi; E. Occhiello; J.W. Coburn

doi:10.1063/1.339197

Journal of Applied Physics

Paper

01 Dec 1987

Effect of ion bombardment on the plasma-assisted etching and deposition of plasma perfluoropolymer thin films

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Abstract

A study of the etching and deposition of plasma perfluoropolymer thin films has been carried out by using quartz-crystal microbalance methods for a range of feed gas mixtures.

Paper

Plasma Sources in Analytical Mass Spectrometry

J.W. Coburn, W.W. Harrison

Applied Spectroscopy Reviews

Paper

Etching of silicon and silicon dioxide by halofluorocarbon plasmas

E. Occhiello, F. Garbassi, et al.

Journal of Physics D: Applied Physics

Review

Surface science aspects of etching reactions

Harold F. Winters, J.W. Coburn

Surface Science Reports

Paper

Positive-ion bombardment of substrates in rf diode glow discharge sputtering

J.W. Coburn, Eric Kay

Journal of Applied Physics

View all publications

Abstract

Related

Plasma Sources in Analytical Mass Spectrometry

Etching of silicon and silicon dioxide by halofluorocarbon plasmas

Surface science aspects of etching reactions

Positive-ion bombardment of substrates in rf diode glow discharge sputtering