Effect of ion bombardment on the plasma-assisted etching and deposition of plasma perfluoropolymer thin films

F. Fracassi; E. Occhiello; J.W. Coburn

doi:10.1063/1.339197

Journal of Applied Physics

Paper

01 Dec 1987

Effect of ion bombardment on the plasma-assisted etching and deposition of plasma perfluoropolymer thin films

View publication

Abstract

A study of the etching and deposition of plasma perfluoropolymer thin films has been carried out by using quartz-crystal microbalance methods for a range of feed gas mixtures.

Paper

Frequency dependence of ion bombardment of grounded surfaces in rf argon glow discharges in a planar system

K. Köhler, D.E. Horne, et al.

Journal of Applied Physics

Paper

Plasma Sources in Analytical Mass Spectrometry

J.W. Coburn, W.W. Harrison

Applied Spectroscopy Reviews

Paper

Quartz crystal microbalance simulation of the directionality of Si etching in CF₄ glow discharges

Natasha C.Us, R.W. Sadowski, et al.

Plasma Chemistry and Plasma Processing

Paper

The influence of ion sputtering on the elemental analysis of solid surfaces

J.W. Coburn

Thin Solid Films

View all publications

Abstract

Related

Frequency dependence of ion bombardment of grounded surfaces in rf argon glow discharges in a planar system

Plasma Sources in Analytical Mass Spectrometry

Quartz crystal microbalance simulation of the directionality of Si etching in CF4 glow discharges

The influence of ion sputtering on the elemental analysis of solid surfaces

Quartz crystal microbalance simulation of the directionality of Si etching in CF₄ glow discharges