Asymmetrical triple-gate FET
Meng-Hsueh Chiang, Jeng-Nan Lin, et al.
SISPAD 2007
This letter discusses the effect of off-axis implant on the characteristics of advanced self-aligned bipolar transistors utilizing a sidewall-spacer technology, Experimental results are presented to show that as a result of offsetting the base profile with respect to the emitter profile due to the sidewall shadowing effect, the 7° off-axis implant causes orientation-dependent perimeter punchthrough at one of the emitter edges and orientation-dependent perimeter tunneling at the other emitter edge. Copyright © 1987 by The Institute of Electrical and Electronics Engineers, Inc.
Meng-Hsueh Chiang, Jeng-Nan Lin, et al.
SISPAD 2007
Meng-Hsueh Chiang, Keunwoo Kim, et al.
IEEE International SOI Conference 2005
Arvind Kumar, Massimo V. Fischetti, et al.
Journal of Applied Physics
Arvind Kumar, Tak H. Ning, et al.
VLSI Technology 2002