MODELING ON INCREASE OF N-P-N AND P-N-P CURRENT GAIN BY HYDROGEN ELECTROMIGRATION IN POLYSILICON EMITTERS
- J. Zhao
- G.P. Li
- et al.
- 1993
- IEDM 1993
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33 results for G.P. Li
On the investigation of 1/F noise of polysilicon emitter P-N-P transistors in a C-BiCMOS technology
- J. Zhao
- G.P. Li
- et al.
- 1993
- VLSI-TSA 1993
On the Effects of Hydrogen in p-n-p Transistors under Forward Current Stress in a C-BiCMOS Technology
- J.Y.C. Sun
- Maw-Rong Chin
- 1993
- IEEE Electron Device Letters
Submicrometer Si and Si-Ge Epitaxial-Bas Double-Poly Self-Aligned Bipolar Transistors
- T.C. Chen
- E. Ganin
- et al.
- 1991
- IEEE T-ED
23 ps/2.1 mW ECL gate
- Kai-Yap Toh
- C.T. Chuang
- et al.
- 1989
- ISSCC 1989
Low-temperature operation of silicon bipolar ECL circuits
- J.D. Cressler
- D.D. Tang
- et al.
- 1989
- ISSCC 1989
Submicron high performance bipolar technology
- T.C. Chen
- J.D. Cressler
- et al.
- 1989
- VLSI Technology 1989
A 27 GHz 20 ps PNP technology
- J. Warnock
- P.F. Lu
- et al.
- 1989
- IEDM 1989
A Submicrometer High-Performance Bipolar Technology
- Tze-Chiang Chen
- Kai-Yap Toh
- et al.
- 1989
- IEEE Electron Device Letters
Sub-300-ps CBL Circuits
- S.K. Wiedmann
- Tze Chiang Chen
- et al.
- 1989
- IEEE Electron Device Letters