J.V. Harzer, B. Hillebrands, et al.
Journal of Magnetism and Magnetic Materials
A novel technique has been devised to allow the growth of strained Si/SiGe quantum wells (QW's) on Si substrates, while virtually eliminating threading dislocations. The amount of strain in the quantum wells is tuned by ramping the Ge content in a Si/SiGe multilayer buffer. Both n-type and p-type modulation-doped structures have been grown using this technique, with mobilities at 1.4 K as high as 19 000 cm2/V s and 6000 cm2/V s, respectively. The effect of strain on the bandstructure in both cases is investigated. © 1992.
J.V. Harzer, B. Hillebrands, et al.
Journal of Magnetism and Magnetic Materials
Mark W. Dowley
Solid State Communications
C.M. Brown, L. Cristofolini, et al.
Chemistry of Materials
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007