Skip to main content
Research
Focus areas
Blog
Publications
Careers
About
Back
Focus areas
Semiconductors
Artificial Intelligence
Quantum Computing
Hybrid Cloud
Back
About
Overview
Labs
People
Back
Semiconductors
Back
Artificial Intelligence
Back
Quantum Computing
Back
Hybrid Cloud
Back
Overview
Back
Labs
Back
People
Research
Focus areas
Semiconductors
Artificial Intelligence
Quantum Computing
Hybrid Cloud
Blog
Publications
Careers
About
Overview
Labs
People
Open IBM search field
Close
Applied Physics Letters
Paper
23 Dec 2004
Effect of surface scattering on electron mobility in an inversion layer on p-type silicon
View publication
Abstract
No abstract available.
Related
Paper
Landau-level broadening and scattering time in modulation doped GaAs/AlGaAs heterostructures
Paper
Two-dimensional hole gas in Si/SiGe heterostructures
Paper
Nonlinear behavior of magnetoconductance in two-dimensional electron gas
Paper
FQHE states of high mobility n-Si/Si
1-x
Ge
x
heterostructures in pulsed magnetic fields
View all publications