True 3-D displays for avionics and mission crewstations
Elizabeth A. Sholler, Frederick M. Meyer, et al.
SPIE AeroSense 1997
A design for an ultra-small MOSFET is presented. MOSFETs with submicron channel lengths (L ≲ 0.25 μm) that operate with controlled punchthrough current are analyzed by two-dimensional numerical modeling. Current-voltage characteristics for subthreshold, nonsaturated and saturated regions of operation were obtained at various temperatures for devices of different channel length. The results indicate that device current is due to barrier-limited, space-charge-limited and surface-inversion conduction processes. © 1985.
Elizabeth A. Sholler, Frederick M. Meyer, et al.
SPIE AeroSense 1997
K.N. Tu
Materials Science and Engineering: A
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
Heinz Schmid, Hans Biebuyck, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures