K.A. Chao
Physical Review B
A design for an ultra-small MOSFET is presented. MOSFETs with submicron channel lengths (L ≲ 0.25 μm) that operate with controlled punchthrough current are analyzed by two-dimensional numerical modeling. Current-voltage characteristics for subthreshold, nonsaturated and saturated regions of operation were obtained at various temperatures for devices of different channel length. The results indicate that device current is due to barrier-limited, space-charge-limited and surface-inversion conduction processes. © 1985.
K.A. Chao
Physical Review B
M. Hargrove, S.W. Crowder, et al.
IEDM 1998
D.D. Awschalom, J.-M. Halbout
Journal of Magnetism and Magnetic Materials
J.R. Thompson, Yang Ren Sun, et al.
Physica A: Statistical Mechanics and its Applications