M.A. Lutz, R.M. Feenstra, et al.
Surface Science
The effect of reactive ion etching and plasma etching on the electrical properties of boron-doped silicon has been studied, employing junction capacitance measurements on Schottky diodes. Deep-level transient spectroscopy measurements on the treated samples reveal the presence of a number of previously unreported near-surface traps. The depth profiles of the observed traps have been determined, and their annealing behaviour is studied up to 200°C. A tentative association of these traps with strain-induced defects resulting from deuterium platelet formation or with vacancy-related defect complexes is proposed. © 1989.
M.A. Lutz, R.M. Feenstra, et al.
Surface Science
A.B. McLean, R.H. Williams
Journal of Physics C: Solid State Physics
R. Ghez, M.B. Small
JES
R.M. Macfarlane, R.L. Cone
Physical Review B - CMMP