J. Appenzeller, J. Knoch, et al.
IEDM 2002
The fabrication of electronic devices based on single-walled nitride nanotubes (BNNT) was discussed. The gate-induced barrier modulation was observed in vertically scaled devices, resulting in field-effect transistor operation. The devices showed an exponentially increasing current (Id) with the applied voltage bias (Vds) up to 35 V at room temperature.
J. Appenzeller, J. Knoch, et al.
IEDM 2002
S.J. Wind, J. Appenzeller, et al.
Applied Physics Letters
R. Martel, V. Derycke, et al.
Physical Review Letters
M. Radosavljević, S. Heinze, et al.
Applied Physics Letters