W.L. Warren, Jerzy Kanicki, et al.
Applied Physics Letters
We have explored the nature of the silicon dangling-bond center in amorphous hydrogenated silicon nitride (a-SiNx) thin films, and its relationship to the charge trapping centers using electron paramagnetic resonance (EPR) and capacitance-voltage (C-V) measurements. We have investigated the quantitative relationship between the concentration of silicon dangling bonds using EPR and the concentration of charge traps, measured by C-V measurements, for both UV-illuminated and unilluminated a-SiNx thin films subjected to both electron and hole injection sequences. A theoretical framework for our results is also discussed. These results continue to support a model in which the Si dangling bond is a negative-U defect in silicon nitride, and that a change in charge state of preexisting positively and negatively charged Si sites is responsible for the trapping phenomena observed in these thin film dielectrics.
W.L. Warren, Jerzy Kanicki, et al.
Applied Physics Letters
W.L. Warren, Jerzy Kanicki, et al.
MRS Proceedings 1992
Jerzy Kanicki, W.L. Warren, et al.
SSDM 1992
C. Godet, Jerzy Kanicki, et al.
Journal of Applied Physics