J.E. Yehoda, R.I. Fuentes, et al.
Applied Physics Letters
The enhancement of electron injection into silicon dioxide layers using a metal-granular metal film-SiO2-silicon structure is reported for Al, Ni, and Mo-SiO2 cermets. This enhancement was found to be stronger for higher metal to oxide ratios. The I-V characteristic curves for these structures follow the Fowler-Nordheim tunneling mechanism behavior, indicating that the dominant effect is an enhancement of the electric field near the granular film-SiO2 interface.
J.E. Yehoda, R.I. Fuentes, et al.
Applied Physics Letters
Stefan K. C. Lai, D.J. Dimaria, et al.
IEEE T-ED
D. Arnold, E. Cartier, et al.
Physical Review B
D.J. Dimaria, David W. Dong, et al.
IEEE T-ED