A. Krol, C.J. Sher, et al.
Surface Science
Paper
Enhanced secondary electron injection in novel SiGe flash memory devices
Abstract
2-D MonteCarlo (MC) simulations were used to explore the property of silicon germinium (SiGe) layers to control and enhance channel-initiated secondary electron (CHISEL) gate current. Novel SiGe flash memory cells showed a 4X enhancement in CHESEL gate current for both planar and vertical 0.18μtechnology.
Related
I. Morgenstern, K.A. Müller, et al.
Physica B: Physics of Condensed Matter
John G. Long, Peter C. Searson, et al.
JES
Paper
The DX centre
T.N. Morgan
Semiconductor Science and Technology