Germanium-on-Si MOSFETS with HFO 2 gate dielectric
- J.P. Donnelly
- J. Chen
- et al.
- 2005
- ECS Meeting 2005
Publications
Date
Featured collections
Popular topics
15 results for Sanjay K. Banerjee
Performance enhancement in vertical sub-100 nm nMOSFETs with graded doped channels
- Q. Ouyang
- X. Chen
- et al.
- 2002
- ICCDCS 2002
Fabrication of a novel vertical pMOSFET with enhanced drive current and reduced short-channel effects and floating body effects
- Q. Ouyang
- X. Chen
- et al.
- 2001
- VLSI Technology 2001
Fast and slow transient charging in various III-V field-effect transistors with atomic-layer-deposited-Al2O3 gate dielectric
- Michael E. Ramón
- Tarik Akyol
- et al.
- 2013
- Applied Physics Letters
Mechanism of VFB / VTH shift in Dysprosium incorporated HfO2 gate dielectric n-Type Metal-Oxide-Semiconductor devices
- Tackhwi Lee
- Kisik Choi
- et al.
- 2011
- Journal of Vacuum Science and Technology B
Reduced gate-leakage current and charge trapping characteristics of dysprosium-incorporated HfO2 gate-oxide n-MOS devices
- Tackhwi Lee
- Sanjay K. Banerjee
- 2011
- IEEE T-ED
Hall mobility measurements in enhancement-mode GaAs field-effect transistors with Al2 O3 gate dielectric
- Davood Shahrjerdi
- Junghyo Nah
- et al.
- 2010
- Applied Physics Letters
Scaling properties of Ge-SixGe1-x coreshell nanowire field-effect transistors
- Junghyo Nah
- En-Shao Liu
- et al.
- 2010
- IEEE T-ED
Considerations for evaluating hot-electron reliability of strained Si n-channel MOSFETs
- D.Q. Kelly
- S. Dey
- et al.
- 2005
- Microelectronics Reliability
Improved hot-electron reliability in strained-Si nMOS
- David Onsongo
- David Q. Kelly
- et al.
- 2004
- IEEE Transactions on Electron Devices