Conference paper
90 nm SiCOH technology in 300 mm manufacturing
L. Clevenger, M. Yoon, et al.
ADMETA 2004
Thin Si films have been grown isothermally on Ge(100) substrates using alternating exposures of Si2H6 and Si2Cl 6, maintaining chlorine and hydrogen surface termination. At 465°C, film growth rate is roughly 2 monolayer per cycle (one cycle equals 1 Si2H6 and 1 Si2Cl6 exposure). At 475°C a uniform epitaxial film is obtained, while islanding is observed at higher T. This process is thermally activated and is not strictly self-limiting, but has certain desirable characteristics of atomic layer epitaxy growth.
L. Clevenger, M. Yoon, et al.
ADMETA 2004
T. Dalton, N. Fuller, et al.
IITC 2004
D.D. Koleske, S. Gates, et al.
Surface Science
S. Cohen, J.C. Liu, et al.
MRS Spring Meeting 1999