C.M. Chiang, S. Gates, et al.
Chemical Physics Letters
Submonolayer coverages of B, Sn, and Ge are prepared on Si(100) surfaces, and characterized using time-of-flight scattering and recoiling spectroscopy. The dopant]] marks" the initial Si interface, and Si is grown on top of the]] marked" surface, and is designated Si*. Attenuation of the elemental B, Sn, and Ge signals by Si* is used to evaluate Si precursors for atomic layer epitaxy, and compare the thermal stability of Si*/B/Si(100), Si*/Sn/Si(100), and Si*/Ge/Si(100) structures.
C.M. Chiang, S. Gates, et al.
Chemical Physics Letters
D.D. Koleske, S. Gates, et al.
The Journal of Chemical Physics
D.D. Koleske, S. Gates
The Journal of Chemical Physics
S. Gates, C.M. Greenlief, et al.
Chemical Physics Letters