S. Gates, S. Papa Rao, et al.
Microelectronic Engineering
Submonolayer coverages of B, Sn, and Ge are prepared on Si(100) surfaces, and characterized using time-of-flight scattering and recoiling spectroscopy. The dopant]] marks" the initial Si interface, and Si is grown on top of the]] marked" surface, and is designated Si*. Attenuation of the elemental B, Sn, and Ge signals by Si* is used to evaluate Si precursors for atomic layer epitaxy, and compare the thermal stability of Si*/B/Si(100), Si*/Sn/Si(100), and Si*/Ge/Si(100) structures.
S. Gates, S. Papa Rao, et al.
Microelectronic Engineering
S. Gates, S.K. Kulkarni, et al.
Symposium on Process Physics and Modeling in Semiconductor Technology 1990
D.D. Koleske, S. Gates
Journal of Applied Physics
R. Imbihl, J.E. Demuth, et al.
Physical Review B