Etch pits and dislocations in {100} GaAs wafers

J. Angilello; R.M. Potemski; G.R. Woolhouse

doi:10.1063/1.321833

Journal of Applied Physics

Paper

02 Sep 2008

Etch pits and dislocations in {100} GaAs wafers

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Abstract

The reliability of molten KOH for revealing dislocations intersecting {100} faces of GaAs has been tested using transmission x-ray topography. It is found to be a "faithful" etch.

Paper

Two-dimensional lattice simulation by magnetic bubbles

G.R. Woolhouse, P. Chaujdhari

Philosophical Magazine

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Carbon incorporation in metal-organic vapor phase epitaxy grown gaas from CH_xl_4-x, HI, and l₂

N.I. Buchan, T.F. Kuech, et al.

Journal of Electronic Materials

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Doping and dopant behavior in (Al,Ga)As grown by metalorganic vapor phase epitaxy

T.F. Kuech, M.A. Tischler, et al.

Journal of Crystal Growth

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Compound semiconductor surface and interface problems in liquid phase epitaxy (lpe)

M.B. Small, R.M. Potemski

Proceedings of SPIE 1989

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Abstract

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Two-dimensional lattice simulation by magnetic bubbles

Carbon incorporation in metal-organic vapor phase epitaxy grown gaas from CHxl4-x, HI, and l2

Doping and dopant behavior in (Al,Ga)As grown by metalorganic vapor phase epitaxy

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