Etch pits and dislocations in {100} GaAs wafers

J. Angilello; R.M. Potemski; G.R. Woolhouse

doi:10.1063/1.321833

Journal of Applied Physics

Paper

02 Sep 2008

Etch pits and dislocations in {100} GaAs wafers

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Abstract

The reliability of molten KOH for revealing dislocations intersecting {100} faces of GaAs has been tested using transmission x-ray topography. It is found to be a "faithful" etch.

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Stresses and radiation damage in Ar⁺ and Ti⁺ ion-implanted silicon

P.B. Madakson, J. Angilello

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Secondary dislocation climb during optical excitation of GaAs laser material

G.R. Woolhouse, B. Monemar, et al.

Applied Physics Letters

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Carbon incorporation in metal-organic vapor phase epitaxy grown gaas from CH_xl_4-x, HI, and l₂

N.I. Buchan, T.F. Kuech, et al.

Journal of Electronic Materials

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Nonspiking ohmic contact to p-GaAs by solid-phase regrowth

C.C. Han, X.Z. Wang, et al.

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Abstract

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Stresses and radiation damage in Ar+ and Ti+ ion-implanted silicon

Secondary dislocation climb during optical excitation of GaAs laser material

Carbon incorporation in metal-organic vapor phase epitaxy grown gaas from CHxl4-x, HI, and l2

Nonspiking ohmic contact to p-GaAs by solid-phase regrowth

Stresses and radiation damage in Ar⁺ and Ti⁺ ion-implanted silicon

Carbon incorporation in metal-organic vapor phase epitaxy grown gaas from CH_xl_4-x, HI, and l₂