The Dissolution Kinetics of GaAs in Undersaturated Isothermal Solutions in the Ga-Al-As System
- M.B. Small
- R. Ghez
- et al.
- 2019
- JES
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47 results for R.M. Potemski
Epitaxial Growth of GaAs with (C2H5)2GaCl and AsH3 in a Hotwall Reactor
- T.F. Kuech
- M.A. Tischler
- et al.
- 2019
- JES
Epitaxial Growth and Selectivity of AlxGa1-xAs Using Novel Metalorganic Precursors
- M.S. Goorsky
- T.F. Kuech
- et al.
- 2019
- JES
Etch pits and dislocations in {100} GaAs wafers
- J. Angilello
- R.M. Potemski
- et al.
- 2008
- Journal of Applied Physics
Meniscus lines as nucleation sites for the active layer of a double-heterostructure laser grown by LPE
- M.B. Small
- J.M. Blum
- et al.
- 2008
- Applied Physics Letters
The formation of Ga1-xAlxAs layers on the surface of GaAs during continual dissolution into Ga-Al-As solutions
- M.B. Small
- R. Ghez
- et al.
- 2008
- Applied Physics Letters
Ga1-xAlxAs LED structures grown on GaP substrates
- J. Woodall
- R.M. Potemski
- et al.
- 2003
- Applied Physics Letters
Magnesium gallate spinel: A substrate for the direct liquid-phase epitaxial growth of (Ga,Al)As
- B.A. Scott
- K.H. Nichols
- et al.
- 2003
- Applied Physics Letters
Vapor Pressure and Vapor Composition of Diethylgallium Chloride and Diethylaluminum Chloride
- Nicholas I. Buchan
- Robert M. Potemski
- et al.
- 2002
- Journal of Chemical and Engineering Data
Film stress of sputtered W/C multilayers and strain relaxation upon annealing
- J.F. Geisz
- T.F. Kuech
- et al.
- 1994
- Journal of Applied Physics