David B. Mitzi
Journal of Materials Chemistry
The published transport properties of carriers in silicon inversion layers suggest the existence of a mobility edge separating conducting from localized states at low temperature. Further experimental tests of the mobility-edge model are proposed. © 1974 The American Physical Society.
David B. Mitzi
Journal of Materials Chemistry
Min Yang, Jeremy Schaub, et al.
Technical Digest-International Electron Devices Meeting
R.D. Murphy, R.O. Watts
Journal of Low Temperature Physics
William G. Van der Sluys, Alfred P. Sattelberger, et al.
Polyhedron