R.J. Gambino, N.R. Stemple, et al.
Journal of Physics and Chemistry of Solids
Extended X-ray absorption fine structure measurements were used to determine nearest neighbor coordination numbers and distances for As in amorphous Si prepared by 100 keV As ion-implantation of single crystal Si. In the limit of low As concentration, the average AsSi coordination number was 3.2±0.1 and the As-to-Si distance was 2.37±0.02 A ̊, compared with 4 and 2.41±0.02 A ̊, respectively, for As in crystalline Si. It is concluded that 20% of the As atoms are fourfold coordinated and 80% are threefold coordinated in the amorphous Si, and that the lack of electrical doping by the fourfold coordinated As results from electron trapping by dangling bonds or other structural defects. © 1992.
R.J. Gambino, N.R. Stemple, et al.
Journal of Physics and Chemistry of Solids
Lawrence Suchow, Norman R. Stemple
JES
J. Paraszczak, J.M. Shaw, et al.
Micro and Nano Engineering
Michael Ray, Yves C. Martin
Proceedings of SPIE - The International Society for Optical Engineering