S. Voldman, P. Juliano, et al.
EOS/ESD 2000
Silicon nitride films have been prepared by excimer laser photolysis of ammonia/silane or ammonia/disilane mixtures at temperatures in the range 225-625°C in a hot-walled low-pressure reactor. The highest-quality films, deposited at 225°C, have high breakdown-field strength, Ebd=8.8 Mv cm-1, low midgap interface-state-trap densities, N it=1.7×1011 eV-1 cm-2, and a dielectric constant of ε=4.8.
S. Voldman, P. Juliano, et al.
EOS/ESD 2000
Stefan Zollner, R.T. Collins, et al.
SPIE Semiconductors 1992
Ming L. Yu, D.J. Vitkavage, et al.
Journal of Applied Physics
D.L. Harame, K. Schonenberg, et al.
IEDM 1994